On March 6, CREE announced the launch of the new CPW5 Z-Rec ® high-power silicon carbide Schottky diode and the industry's first commercial mass-produced 50A silicon carbide rectifier.
The new diode products are optimized to enable SiC technology to be used in high power systems from 50 kW to over 1 MW, resulting in cost reduction, increased efficiency, system simplification and improved reliability. The new products are suitable for applications including solar photovoltaic inverters, industrial power supplies, induction heating, charging base stations, fan converters, traction inverters and more.
CPW5 Schottky 50A diode developed by Cree can be directly matched with 50A metal oxide semiconductor field effect transistor (MOSFET) or insulated gate bipolar transistor (IGBT), replacing multiple low voltage and low current carbonization with a single CPW5 rectifier Silicon Schottky diodes or silicon PIN diodes reduce system complexity and cost. In addition, due to the reduction in voltage overshoot during the silicon carbide switch, the reduction in maximum rated voltage and the elimination of the snubber circuit are achieved, resulting in additional cost savings.
Cree's CPW5 silicon carbide Schottky diodes enable a new generation of high current silicon/silicon carbide insulated gate bipolar transistor (IGBT) modules. Hybrid silicon/silicon carbide insulated gate bipolar transistor (IGBT) modules can reduce switching losses by up to 43% compared to conventional modules while reducing voltage overshoot, current overshoot, switching dead time, and cooling conditions.
At the same time, design engineers can use the same gate-level drivers and circuits as traditional modules, making implementation easier and faster. Cree CPW5 SiC Schottky diodes also provide more than 500A repeat and 2000A non-repetitive peak forward surge resistance, providing higher reliability under the most severe electrical conditions.
The new diode products are optimized to enable SiC technology to be used in high power systems from 50 kW to over 1 MW, resulting in cost reduction, increased efficiency, system simplification and improved reliability. The new products are suitable for applications including solar photovoltaic inverters, industrial power supplies, induction heating, charging base stations, fan converters, traction inverters and more.
CPW5 Schottky 50A diode developed by Cree can be directly matched with 50A metal oxide semiconductor field effect transistor (MOSFET) or insulated gate bipolar transistor (IGBT), replacing multiple low voltage and low current carbonization with a single CPW5 rectifier Silicon Schottky diodes or silicon PIN diodes reduce system complexity and cost. In addition, due to the reduction in voltage overshoot during the silicon carbide switch, the reduction in maximum rated voltage and the elimination of the snubber circuit are achieved, resulting in additional cost savings.
(Crui CPW5 silicon carbide Schottky diode)
Cree's CPW5 silicon carbide Schottky diodes enable a new generation of high current silicon/silicon carbide insulated gate bipolar transistor (IGBT) modules. Hybrid silicon/silicon carbide insulated gate bipolar transistor (IGBT) modules can reduce switching losses by up to 43% compared to conventional modules while reducing voltage overshoot, current overshoot, switching dead time, and cooling conditions.
At the same time, design engineers can use the same gate-level drivers and circuits as traditional modules, making implementation easier and faster. Cree CPW5 SiC Schottky diodes also provide more than 500A repeat and 2000A non-repetitive peak forward surge resistance, providing higher reliability under the most severe electrical conditions.
(This article is related to Ke Rui)
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