Due to its low false alarm rate, high communication accuracy, and the absence of need for cryogenic cooling or scanning, UV photon detection technology offers significant advantages. Its lightweight design and reliability make it highly suitable for applications in defense fields such as UV guidance, missile identification, and shipborne communications, where strategic importance is crucial. Beyond military use, this technology also holds great value in civilian areas, including power grid monitoring, medical imaging, maritime search and rescue, and environmental and biochemical testing.
In recent years, solid-state piezoelectric semiconductor-based ultraviolet detection technology has gained prominence, gradually replacing traditional vacuum photodetectors due to its compact size, long lifespan, and low power consumption. As a result, research on UV detection based on piezoelectric materials has become a major focus in both academic and industrial sectors. Scientists worldwide are working to further enhance the sensitivity and response speed of these detectors, aiming to improve their performance for more demanding applications.
Dr. Guo Zhen from the team led by Professor Zhou Lianqun at the Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, has made significant progress in this area. In a recent paper published in *ACS Applied Materials & Interfaces*, the team explored the design of piezoelectric-based UV photodetectors, analyzing key factors that influence their performance. The study focused on optimizing photon capture, surface plasmon resonance, the piezoelectric effect, and carrier transport at the interface.
The researchers developed a UV detector using ZnO piezoelectric material. Under low-bias ultraviolet radiation (380 nm), the detector achieved a detection rate of 1.69×10¹ⶠto 1.71×10¹ⶠJones on both the front and back sides. The response time was measured in milliseconds, demonstrating fast and efficient operation. The experimental results revealed that the detector can selectively detect UV photons through effective modulation of the surface interface carriers. The response signal was influenced by multiple factors, including the active layer, carrier diffusion length, and electric field strength.
This research was supported by several key institutions, including the Chinese Academy of Sciences, the Ministry of Science and Technology, the National Natural Science Foundation, the Natural Science Foundation of Jiangsu Province, and the Jiangsu Provincial Institute of Industrial Technology. The findings represent an important step forward in the development of advanced UV detection systems with broad potential applications in both defense and civilian sectors.
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