In recent years, with the rapid development of the Internet of Things, the sensors are also close behind!
Sensors are moving in the direction of sensitivity, precision, adaptability, compactness and intelligence. In this process, new members of the family of fiber-optic sensor sensors have become popular.
Optical fiber sensor characteristics of a high sensitivity;
Second, the geometric shape has a variety of adaptability, can be made into any shape of fiber optic sensor;
Third, it can manufacture devices that sense various physical information (sound, magnetic, temperature, rotation, etc.);
Fourth, can be used for high pressure, electrical noise, high temperature, corrosion, or other harsh environments;
Fifth, but also with the inherent compatibility of optical fiber telemetry technology.
Optical fiber sensors have a wide range of applications, mainly in the following areas:
The application of interference gyroscopes and grating pressure sensors in bridges, dams, and oil fields in urban construction. Fiber-optic sensors can be embedded in concrete, carbon fiber-reinforced plastics, and composites to measure stress relaxation, construction stress, and dynamic load stress, thereby assessing the structural performance of bridges during short-term construction and long-term operating conditions.
In the power system, it is necessary to measure parameters such as temperature and current, such as the temperature of the stator and rotor in high-voltage transformers and large motors. Since electrical sensors are susceptible to electromagnetic field interference, they cannot be used in such applications and can only be used. Fiber Optic Sensor. For example, a distributed optical fiber temperature sensor is a new technology developed in recent years for real-time measurement of spatial temperature field distribution.
Temperature measurement of production process and equipment for flammable and explosive materials. The optical fiber sensor is essentially a fireproof and explosion-proof device. It does not require explosion-proof measures and is very safe and reliable. Compared with electrical sensors, both cost and sensitivity can be improved.
In addition, it can also be applied to railway monitoring, rocket propulsion systems, and well testing.
In short, the Internet of Things and fiber-optic sensors are complementary and mutually reinforcing. Optical fiber has the advantages of wideband, high capacity, long-distance transmission and multi-parameter, distributed, low-power sensing. Optical fiber sensing can constantly capture new technologies for optical fiber communications (such as new semiconductor light sources, new optical fibers) and new devices. Various optical fiber sensors are expected to be widely used in the Internet of Things. Optical fiber technology has a broad application prospect in the Internet of Things. All-optical IoT is expected to emerge in the future and become a new form of Internet of Things.
Metal oxide semiconductor field effect (MOS) transistors can be divided into N-channel and P-channel. P-channel silicon MOS field-effect transistors have two P+ regions on the N-type silicon substrate, which are called source and The drain is not conductive between the two poles, and when a sufficient positive voltage (gate ground) is applied to the source, the surface of the N-type silicon under the gate exhibits a P-type inversion layer, which becomes a channel connecting the source and the drain. . Changing the gate voltage changes the density of the holes in the channel, thereby changing the resistance of the channel. Such a MOS Field Effect Transistor is called a P-channel enhancement type field effect transistor. If the surface of the N-type silicon substrate is free of gate voltage, the P-type inversion layer channel already exists, and the appropriate bias voltage can increase or decrease the resistance of the channel. Such a MOS field effect transistor is referred to as a P-channel depletion field effect transistor. They are collectively referred to as PMOS transistors.
P Channel Mosfet,P Channel Power Mosfet,Field Effect Transistor,Field Effect Transistor Symbol
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